Title :
Low-insertion-loss DP3T MMIC switch for dual-band cellular phones
Author :
Nagayama, Akira ; Nishibe, Masatoyo ; Inaoka, Takayuki ; Mineshima, Nobuhiro
Author_Institution :
Japan Radio Co. Ltd., Tokyo, Japan
fDate :
8/1/1999 12:00:00 AM
Abstract :
We propose a new type of dual-pole triple-throw double heterojunction monolithic microwave integrated circuit (IC) switch for use in digital cellular phones. The IC we developed exhibits a low gate leakage current of 400 nA and an insertion loss as low as 0.4 dB, even at added power of 34 dBm at a frequency of 950 MHz. Measured P1 dB was about 36 dBm, and a low distortion of 65 dBc was also obtained
Keywords :
MMIC; cellular radio; field effect MMIC; microwave switches; telephone sets; 0.4 dB; 400 nA; 950 MHz; distortion; dual-band cellular phone; dual-pole triple-throw MMIC switch; heterojunction FET; insertion loss; leakage current; Cellular phones; Digital integrated circuits; Dual band; Heterojunctions; Leakage current; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Switches; Switching circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
