Direct-signal modulation using a silicon microstrip patch antenna

Author

Fusco, Vincent F. ; Chen, Qiang

Author_Institution

Dept. of Electr. & Electron. Eng., Queen´´s Univ., Belfast, UK

Volume

47

Issue

6

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

1025

Lastpage

1028

Abstract

In this paper, a microstrip patch antenna is fabricated directly onto a high-resistivity silicon substrate without an insulating barrier, thereby forming a distributed Schottky diode between the patch radiator metallization and ground plane. By applying d.c. bias control to the patch metallization, direct amplitude modulation of a CW microwave carrier can be achieved. Experimental results are presented that show the far-field radiation characteristics of the structure and its response to applied base-band modulation signals. Also direct base-band signal detection using the patch antenna is discussed

Keywords

amplitude modulation; antenna accessories; antenna radiation patterns; elemental semiconductors; heterodyne detection; land mobile radio; microstrip antennas; receiving antennas; 7 to 13 GHz; CW microwave carrier; Si; Si microstrip patch antenna; base-band modulation signals; d.c. bias control; direct amplitude modulation; direct-signal modulation; distributed Schottky diode; far-field radiation; ground plane; high-resistivity Si substrate; patch metallization; patch radiator metallization; Contacts; Insulation; Metallization; Microstrip antennas; Patch antennas; Schottky diodes; Semiconductor diodes; Silicon; Substrates; Voltage;

fLanguage

English

Journal_Title

Antennas and Propagation, IEEE Transactions on

Publisher

ieee

ISSN

0018-926X

Type

jour

DOI

10.1109/8.777127

Filename

777127