Title :
Effects of breakdown on nondissipative current flow on the quantized hall resistance measurement in Si-MOSFET´s
Author :
Kinoshita, J. ; Inagaki, K. ; Yamanouchi, C. ; Yoshihiro, Kawahara ; Endo, T. ; Murayama, Yuko ; Koyanagi, Mitsumasa ; Wakabayashi, J.-I. ; Kawaji, S.
Abstract :
Experimental results for Si-MOSFETs indicate that breakdown flow occurs at first in the vicinity of the source-drain electrodes. The effect of this inhomogeneous dissipative area on the value of the quantized Hall resistance is demonstrated to be less than a few parts in 107 when the diagonal resistivity ρxx is sufficiently small. Measurements by the use of a Josephson potentiometer is possible even in the presence of an appreciable effect of the dissipative region on the shape of the Hall voltage plateau.
Keywords :
Josephson effect; electric breakdown of solids; electric resistance measurement; elemental semiconductors; insulated gate field effect transistors; quantum Hall effect; silicon; superconducting junction devices; Hall voltage plateau; Josephson potentiometer; Si; breakdown; electric breakdown of solids; electric resistance measurement; nondissipative current flow; quantized Hall resistance measurement; quantum Hall effect;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.1986.6499207
