DocumentCode :
1532856
Title :
Observation of quantum hall effect in Si-MOSFET´s by means of conventional and Josephson potentiometer systems
Author :
Yoshihiro, Kawahara ; Kinoshita, J. ; Inagaki, K. ; Yamanouchi, C. ; Endo, Akira ; Murayama, Yuko ; Koyanagi, Mitsumasa ; Wakabayashi, J.-I. ; Kawaji, S.
Author_Institution :
Device Fundamentals Sect., Electrotech. Lab., Ibaraki, Japan
Issue :
3
fYear :
1986
Firstpage :
268
Lastpage :
271
Abstract :
Measurements of the quantized Hall resistance RH(i), i=4, 8, and 12, have been made for silicon metal-oxide semiconductor field-effect transistors under different experimental conditions T=0.5 to 1.4K and B=10.5 to 14 T, using conventional potentiometer and galvanometer systems. These values of RH(4) are in agreement with those obtained by means of a preliminary system of Josephson potentiometer and SQUID galvanometer to within a few parts in 107.
Keywords :
Josephson effect; electric resistance measurement; elemental semiconductors; insulated gate field effect transistors; quantum Hall effect; silicon; superconducting junction devices; Josephson potentiometer; SQUID galvanometer; Si; Si MOSFET; electric resistance measurement;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/TIM.1986.6499208
Filename :
6499208
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1532856
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