Title :
Analytical Model for Two-Dimensional Ion Implantation Profile in MOS-Structure Substrate
Author :
Suzuki, Kunihiro ; Tanabe, Ryo ; Kojim, Shuichi
Author_Institution :
Fujitsu Labs., Ltd., Atsugi, Japan
Abstract :
We derived an analytical model to obtain a 2-D impurity concentration profile for ions implanted at high-tilt angles in MOS-structure substrates. This model enabled us to simulate MOS device characteristics with a fully analytical impurity distribution where diffusion was neglected. We tested and verified that our analytical model could provide the same results as the ones obtained using a 2-D process simulator.
Keywords :
MOS integrated circuits; 2D impurity concentration profile; 2D process simulator; MOS device characteristics; MOS-structure substrate; two-dimensional ion implantation profile; Analytical models; Annealing; Electric variables; Impurities; Inverse problems; Ion implantation; Lamps; MOS devices; Testing; Very large scale integration; Ion implantation; MOS; two-dimensional profile;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2032621
