DocumentCode
1532999
Title
Progress in the development of an 8-kV light-triggered thyristor with integrated protection functions
Author
Ruff, Martin ; Schulze, Hans-Joachim ; Kellner, Uwe
Author_Institution
Corp. Technol., Siemens AG, Munich, Germany
Volume
46
Issue
8
fYear
1999
fDate
8/1/1999 12:00:00 AM
Firstpage
1768
Lastpage
1774
Abstract
Light-triggered 8-kV thyristors with an integrated breakover diode were fabricated. The adjustment of the breakdown voltage of the breakover diode (BOD) is realized by a well-defined curvature of the junction between the p-base and the n-base. A multiple amplifying gate structure, together with an integrated turn-on current limiting resistor, guarantees a safe turn-on behavior in the case of overvoltage triggering as well as during light triggering. These thyristors have successfully been put into service at the Celilo Converter Station of the Pacific Northwest-Southwest HVDC Intertie by Bonneville Power Administration in Portland/Oregon/USA. There, a mercury arc valve was replaced by a valve containing these light triggered thyristors with integrated overvoltage protection. In a further development, the amplifying gate structure was optimized in order to simplify the fabrication process and to maintain the high light sensitivity while obtaining a higher dV/dt and a higher dI/dt capability. This was realized by shrinking the optical gate, by carefully adjusting the triggering sensitivity of the amplifying gates and by widening of the turn-on current limiting thyristor. With these measures, initial investigations regarding the integration of a forward recovery protection were also performed
Keywords
overvoltage protection; photothyristors; power semiconductor switches; semiconductor device breakdown; semiconductor device packaging; semiconductor device reliability; 8 kV; breakdown voltage adjustment; forward recovery protection; integrated breakover diode; integrated overvoltage protection; integrated protection functions; integrated turn-on current limiting resistor; light source failure; light-triggered thyristor; multiple amplifying gate structure; overvoltage triggering; presspack housing; safe turn-on behavior; triggering sensitivity; Board of Directors; Current limiters; Diodes; HVDC transmission; Optical device fabrication; Protection; Resistors; Thyristors; Valves; Voltage control;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.777168
Filename
777168
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