Title :
Hall factors of Si NMOS inversion layers for MAGFET modeling
Author :
Jungemann, C. ; Dudenbostel, D. ; Meinerzhagen, B.
Author_Institution :
Bremen Univ., Germany
fDate :
8/1/1999 12:00:00 AM
Abstract :
Hall factors of Si NMOS inversion layers for the modeling of CMOS MAGFET´s are given for a wide range of effective fields, temperatures and doping concentrations. The Hall factors are simulated with a microscopic transport model of the quasi-two-dimensional electron gas (2DEG). The model is verified by measured data of different MOS Hall plates
Keywords :
Hall effect devices; MOSFET; elemental semiconductors; inversion layers; magnetic sensors; semiconductor device models; silicon; two-dimensional electron gas; CMOS MAGFET; Hall factor; MOS Hall plate; Si; Si NMOS inversion layer; device simulation; quasi-two-dimensional electron gas; transport model; Doping; Electron microscopy; Hall effect; MOS devices; MOSFET circuits; Magnetic field measurement; Magnetic fields; Semiconductor device modeling; Semiconductor process modeling; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
