Title :
An analytical model for interaction of SIPOS layer with underlying silicon of SOI RESURF devices
Author :
Chung, Sang-Koo ; Shin, Dong-Koo
Author_Institution :
Dept. of Electron. Eng., Ajou Univ., Suwon, South Korea
fDate :
8/1/1999 12:00:00 AM
Abstract :
An analytical model for interaction of semi-insulating polycrystalline silicon (SIPOS) layer with underlying silicon of SOI RESURF devices is presented which allows a clear picture of the potentials in the two regions coupled through the device parameters including the interface oxide thickness between the regions. The improvement in the breakdown voltage due to the presence of SIPOS layer is demonstrated, numerical simulations are shown to support the analytical model
Keywords :
passivation; power semiconductor diodes; semiconductor device breakdown; semiconductor device models; silicon-on-insulator; SIPOS field plate; SOI RESURF diode; Si; analytical model; breakdown voltage improvement; device parameters; interface oxide thickness; semiinsulating polycrystalline Si; underlying silicon; Analytical models; Magnetic field measurement; Magnetic sensors; Numerical models; Physics; Silicon; Solid state circuits; Temperature distribution; Temperature sensors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
