Title :
An improved model for extraction of strongly spatial dependent lifetimes with the AC lifetime profiling technique
Author :
Daliento, S. ; Sanseverino, A. ; Spirito, P.
Author_Institution :
Dept. of Electron., Naples Univ., Italy
fDate :
8/1/1999 12:00:00 AM
Abstract :
In this work, we present an improvement of the extraction method for the AC lifetime profiling technique using a more accurate evaluation of the abscissa x where the lifetime is measured. By this model, a very good extraction of strongly variable lifetime profiles is obtained
Keywords :
carrier lifetime; measurement theory; power semiconductor devices; semiconductor device measurement; AC lifetime profiling technique; lifetime extraction; model; power devices; strongly spatial dependent lifetimes; Charge carrier lifetime; Electrodes; Frequency; Helium; Measurement techniques; Power dissipation; Semiconductor diodes; Silicon; Testing; Voltage control;
Journal_Title :
Electron Devices, IEEE Transactions on
