• DocumentCode
    1533047
  • Title

    An improved model for extraction of strongly spatial dependent lifetimes with the AC lifetime profiling technique

  • Author

    Daliento, S. ; Sanseverino, A. ; Spirito, P.

  • Author_Institution
    Dept. of Electron., Naples Univ., Italy
  • Volume
    46
  • Issue
    8
  • fYear
    1999
  • fDate
    8/1/1999 12:00:00 AM
  • Firstpage
    1808
  • Lastpage
    1810
  • Abstract
    In this work, we present an improvement of the extraction method for the AC lifetime profiling technique using a more accurate evaluation of the abscissa x where the lifetime is measured. By this model, a very good extraction of strongly variable lifetime profiles is obtained
  • Keywords
    carrier lifetime; measurement theory; power semiconductor devices; semiconductor device measurement; AC lifetime profiling technique; lifetime extraction; model; power devices; strongly spatial dependent lifetimes; Charge carrier lifetime; Electrodes; Frequency; Helium; Measurement techniques; Power dissipation; Semiconductor diodes; Silicon; Testing; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.777175
  • Filename
    777175
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1533047