Title :
The effect of deuterium passivation at different steps of CMOS processing on lifetime improvements of CMOS transistors
Author :
Lee, Jinju ; Epstein, Yefim ; Berti, Antonio C. ; Huber, John ; Hess, Karl ; Lyding, Joseph W.
Author_Institution :
Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
fDate :
8/1/1999 12:00:00 AM
Abstract :
We have investigated the effect of deuterium sintering for reliability lifetime improvement of CMOS transistors with nitride sidewall spacers. SIMS measurements show that lifetime improvements of wafers with deuterium sintering at the Metal-1 and Metal-4 steps are directly related to the deuterium incorporation at the SiO2/Si interface
Keywords :
CMOS integrated circuits; MOSFET; deuterium; passivation; secondary ion mass spectra; semiconductor device metallisation; semiconductor device reliability; sintering; CMOS transistor; D2; Metal-1; Metal-4; SIMS; SiO2-Si; SiO2/Si interface; deuterium passivation; deuterium sintering; nitride sidewall spacer; reliability lifetime; wafer processing; Annealing; CMOS process; CMOS technology; Deuterium; Hot carriers; Hydrogen; Metallization; Passivation; Space technology; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
