• DocumentCode
    1533062
  • Title

    The effect of deuterium passivation at different steps of CMOS processing on lifetime improvements of CMOS transistors

  • Author

    Lee, Jinju ; Epstein, Yefim ; Berti, Antonio C. ; Huber, John ; Hess, Karl ; Lyding, Joseph W.

  • Author_Institution
    Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
  • Volume
    46
  • Issue
    8
  • fYear
    1999
  • fDate
    8/1/1999 12:00:00 AM
  • Firstpage
    1812
  • Lastpage
    1813
  • Abstract
    We have investigated the effect of deuterium sintering for reliability lifetime improvement of CMOS transistors with nitride sidewall spacers. SIMS measurements show that lifetime improvements of wafers with deuterium sintering at the Metal-1 and Metal-4 steps are directly related to the deuterium incorporation at the SiO2/Si interface
  • Keywords
    CMOS integrated circuits; MOSFET; deuterium; passivation; secondary ion mass spectra; semiconductor device metallisation; semiconductor device reliability; sintering; CMOS transistor; D2; Metal-1; Metal-4; SIMS; SiO2-Si; SiO2/Si interface; deuterium passivation; deuterium sintering; nitride sidewall spacer; reliability lifetime; wafer processing; Annealing; CMOS process; CMOS technology; Deuterium; Hot carriers; Hydrogen; Metallization; Passivation; Space technology; Stress;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.777177
  • Filename
    777177
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1533062