Title :
Noniterative Compact Modeling for Intrinsic Carbon-Nanotube FETs: Quantum Capacitance and Ballistic Transport
Author :
Wei, Lan ; Frank, David J. ; Chang, Leland ; Wong, H. -S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
In this paper, an analytical model of intrinsic carbon-nanotube field-effect transistors is presented. The origins of the channel carriers are analyzed in the ballistic limit. A noniterative surface-potential model is developed based on an analytical electrostatic model and a piecewise constant quantum-capacitance model. The model is computationally efficient with no iteration or numerical integration involved, thus facilitating fast circuit simulation and system optimization. Essential physics such as drain-induced barrier lowering and quantum capacitance are captured with reasonable accuracy.
Keywords :
ballistic transport; capacitance; carbon nanotubes; field effect transistors; nanotube devices; semiconductor device models; C; analytical electrostatic model; ballistic limit; ballistic transport; drain-induced barrier; fast circuit simulation; intrinsic carbon nanotube FET; intrinsic carbon nanotube field effect transistors; noniterative compact modeling; noniterative surface-potential model; numerical integration; piecewise constant quantum-capacitance model; quantum capacitance; system optimization; Analytical models; CNTFETs; Electric potential; Electrostatics; Logic gates; Quantum capacitance; Analytical model; ballistic transport; carbon nanotube (CNT); carbon-nanotube field-effect transistor (CNTFET); compact model; quantum capacitance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2153858
