Title :
InGaAsP–InP Square Microlasers With a Vertex Output Waveguide
Author :
Che, Kai-Jun ; Lin, Jian-Dong ; Huang, Yong-Zhen ; Yang, Yue-De ; Xiao, Jin-Long ; Du, Yun
Author_Institution :
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
Abstract :
InGaAsP-InP square microlasers with a vertex output waveguide are fabricated by planar processes, and the etched sidewalls of the lasers are confined by insulating layer SiO2 and p-electrode Ti-Au metals. For a square microlaser with a side length of 30 μm and a 2-μm -wide output waveguide, a continuous-wave threshold current is 26 mA at room temperature and output power is 0.72 mW at 86 mA. The mode interval of 21 and 7.4 nm is observed for the microlasers with the side length of 10 and 30 μm , respectively. Finite-difference time-domain (FDTD) simulations indicate that the lasing modes have incident angles of about 45 ° at the boundaries of the resonator. In addition, square resonators surrounded by air, SiO2-Ti-Au, and SiO2-Au are compared by FDTD simulations.
Keywords :
III-V semiconductors; finite difference time-domain analysis; gallium arsenide; indium compounds; optical waveguides; semiconductor lasers; silicon compounds; InGaAsP-InP; SiO2; current 26 mA; current 86 mA; finite-difference time-domain; p-electrode; power 0.72 mW; square microlasers; square resonators; temperature 293 K to 298 K; vertex output waveguide; wavelength 2 mum; wavelength 30 mum; Etching; Finite difference methods; Gold; Indium phosphide; Insulation; Laser modes; Planar waveguides; Temperature; Time domain analysis; Waveguide lasers; Finite-difference time-domain (FDTD) simulation; InGaAsP–InP; semiconductor microlasers; square resonator;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2057417
