Title :
240-GHz Gain-Bandwidth Product Back-Side Illuminated AlInAs Avalanche Photodiodes
Author :
Lahrichi, M. ; Glastre, G. ; Derouin, E. ; Carpentier, D. ; Lagay, N. ; Decobert, J. ; Achouche, M.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Abstract :
We demonstrate an AlInAs-InGaAs separate absorption, grading, and multiplication avalanche photodiode (APD) with a very thin avalanche layer operating at 1550 nm for 10-Gb/s optical transmission achieving simultaneously high responsivity (0.9 A/W at M = 1), very low excess noise factor (F(M=10) = 3), and very high gain-bandwidth product of 240 GHz. To our knowledge, this is the first time that a back-side illuminated planar junction AlInAs-InGaAs APD achieved such performances.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; semiconductor device noise; AlInAs-InGaAs; avalanche layer; back-side illuminated avalanche photodiodes; back-side illuminated planar junction; bit rate 10 Gbit/s; excess noise factor; gain-bandwidth product; optical transmission; photodiode responsivity; wavelength 1550 nm; Absorption; Avalanche photodiodes; Bandwidth; Dark current; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Optical noise; Signal to noise ratio; AlInAs; GaInAs; avalanche photodiode (APD); dark current; excess noise factor; gain-bandwidth product;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2057503
