Effect of mesa overgrowth on low-frequency noise in planar separate absorption, grading, charge, and multiplication avalanche photodiodes

Author

An, Serguei ; Deen, M. Jamal ; Vetter, A.S. ; Clark, W.R. ; Noel, J.P. ; Shepherd, F.R.

Author_Institution

Sch. of Eng. Sci., Simon Frazer Univ., Vancouver, BC, Canada

Volume

35

Issue

8

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

1196

Lastpage

1202

Abstract

The purpose of this paper is to present a detailed comparison of the low-frequency noise in single-growth and mesa overgrown planar separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APD´s) passivated with SiN_x. It was found that existing models did not explain the bias dependence of the low-frequency noise in the mesa overgrown devices. We have found that a low-temperature anneal decreased the low-frequency noise level in single-growth and mesa overgrown APD´s. In addition, generation-recombination (G-R) noise was detected in mesa overgrown APD´s

Keywords

MOCVD; avalanche photodiodes; optical noise; passivation; semiconductor growth; SAGCM avalanche photodiodes; SiN; SiN_x; bias dependence; generation-recombination noise; low-frequency noise; low-frequency noise level; low-temperature anneal; mesa overgrown APD; mesa overgrown devices; mesa overgrowth; planar separate absorption grading charge and multiplication avalanche photodiodes; single-growth; Absorption; Annealing; Avalanche photodiodes; Low-frequency noise; Noise generators; Noise measurement; Optical attenuators; Semiconductor device noise; Semiconductor films; Silicon compounds;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.777220

Filename

777220