Title :
Effect of mesa overgrowth on low-frequency noise in planar separate absorption, grading, charge, and multiplication avalanche photodiodes
Author :
An, Serguei ; Deen, M. Jamal ; Vetter, A.S. ; Clark, W.R. ; Noel, J.P. ; Shepherd, F.R.
Author_Institution :
Sch. of Eng. Sci., Simon Frazer Univ., Vancouver, BC, Canada
fDate :
8/1/1999 12:00:00 AM
Abstract :
The purpose of this paper is to present a detailed comparison of the low-frequency noise in single-growth and mesa overgrown planar separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APD´s) passivated with SiNx. It was found that existing models did not explain the bias dependence of the low-frequency noise in the mesa overgrown devices. We have found that a low-temperature anneal decreased the low-frequency noise level in single-growth and mesa overgrown APD´s. In addition, generation-recombination (G-R) noise was detected in mesa overgrown APD´s
Keywords :
MOCVD; avalanche photodiodes; optical noise; passivation; semiconductor growth; SAGCM avalanche photodiodes; SiN; SiNx; bias dependence; generation-recombination noise; low-frequency noise; low-frequency noise level; low-temperature anneal; mesa overgrown APD; mesa overgrown devices; mesa overgrowth; planar separate absorption grading charge and multiplication avalanche photodiodes; single-growth; Absorption; Annealing; Avalanche photodiodes; Low-frequency noise; Noise generators; Noise measurement; Optical attenuators; Semiconductor device noise; Semiconductor films; Silicon compounds;
Journal_Title :
Quantum Electronics, IEEE Journal of
