Injection-locking properties of self pulsation in semiconductor lasers

Author

Duan, G.H. ; Pham, G.

Author_Institution

Dept. Commun., Ecole Nat. Superieure des Telecommun., Paris, France

Volume

144

Issue

4

fYear

1997

fDate

8/1/1997 12:00:00 AM

Firstpage

228

Lastpage

234

Abstract

The injection-locking properties of self pulsation in semiconductor lasers are studied, using a phenomenological approach, based on an analogy with laser models. It has been found that the locking range is directly proportional to the input power, rather than to the square root of the input power as in injection-locked microwaves or laser oscillators; the locking range is symmetric with respect to the self-pulsation frequency in the free-running case; in the locking state, the spectral linewidth of the self-pulsation peak is equal to that of the incoming signal. These theoretical results agree very well with experimental ones, obtained on a distributed feedback three-section laser

Keywords

distributed feedback lasers; laser mode locking; laser theory; semiconductor device models; semiconductor lasers; distributed feedback three-section laser; free-running case; incoming signal; injection-locked microwaves; injection-locking properties; input power; laser models; laser oscillators; locking range; locking state; phenomenological approach; self pulsation; self-pulsation frequency; self-pulsation peak; semiconductor lasers; spectral linewidth; square root;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:19971257

Filename

621268