Statistical Simulation of Progressive NBTI Degradation in a 45-nm Technology pMOSFET

We report results of the statistical 3-D simulation of progressive negative-bias temperature instability (NBTI) degradation in p-channel metal-oxide-semiconductor field-effect transistors corresponding to the 45-nm technology generation. The simulations take into account both the discrete NBTI-related fixed/trapped charges and the underlying sources of statistical variability in bulk metal-oxide-semiconductor field-effect transistors. Good agreement has been achieved between simulation results and statistical measurements carried out on similar devices and reported elsewhere. The analysis highlights the importance of the interactions between the discrete fixed/trapped charges and the random discrete dopants in the simulated transistors.