How to Extract the Sheet Resistance and Hall Mobility From Arbitrarily Shaped Planar Four-Terminal Devices With Extended Contacts

Van der Pauw´s method enables the sheet resistance R_sq and the Hall mobility μ_H to be extracted from arbitrarily shaped simply connected planar samples with four peripheral pointlike contacts. This paper generalizes the method for devices with extended contacts. It is found that R_sq and μ_H can be extracted using only six resistance measurements in the absence of a magnetic field and a single magnetic sensitivity measurement. Conversely, if the μ_H of a simply connected planar conducting device with peripheral contacts is known, the magnetic sensitivity of the device can be predicted based on six resistance measurements in the absence of a magnetic field, without any further knowledge of the device geometry. The new method is applied to a variety of differently shaped diffused silicon n-wells with peripheral contacts. The extracted sheet resistance and Hall mobility values show excellent consistency and are in agreement with the fabrication specifications.