Title :
ACCNT: A Metallic-CNT-Tolerant Design Methodology for Carbon Nanotube VLSI: Analyses and Design Guidelines
Author :
Lin, Albert ; Zhang, Jie ; Patil, Nishant ; Wei, Hai ; Mitra, Subhasish ; Wong, H. S Philip
Author_Institution :
Stanford Univ., Stanford, CA, USA
Abstract :
We present analyses for ACCNT (pronounced as “accent”), which is a solution to the metallic-nanotube problem that does not require any metallic-nanotube removal of any kind. ACCNT uses asymmetrically correlated carbon nanotubes to achieve metallic-nanotube tolerance, delivering high ON-OFF ratios while preserving current drive. We analyze the ACCNT methodology in terms of its tradeoffs and explore optimizations that may serve as future design guidelines. We also investigate circuit-level considerations and the impact of density variation on the ACCNT design. We find that ACCNT can improve the yield of a one-million transistor chip from 0% (conventional CNT design) up to 99% at a cost of 3.3× area overhead if the fraction of semiconducting CNTs is improved to 99.9%.
Keywords :
VLSI; carbon nanotubes; integrated circuit design; ACCNT design; ACCNT methodology; carbon nanotube VLSI; circuit-level considerations; metallic-CNT-tolerant design methodology; metallic-nanotube tolerance; on-off ratios; Carbon nanotubes; Design methodology; FETs; Focusing; Guidelines; Integrated circuit technology; Joining processes; Robustness; Semiconductivity; Very large scale integration; Carbon nanotube field-effect transistor (CNFET); correlation; nanotechnology; optimization;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2053207