Title :
A comparison of hydrogen and deuterium plasma treatment effects on polysilicon TFT performance and dc reliability
Author :
Tung, Yeh-Jiun ; Boyce, James ; Ho, Jackson ; Huang, Xuejue ; King, Tsu-Jae
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
We compare the performance and dc reliability of conventional top-gate, self-aligned polysilicon (poly-Si) thin-film transistors (TFT´s) after passivation by plasma deuteration and conventional plasma hydrogenation. An optimum deuteration temperature of 300/spl deg/C is found, as compared to 350/spl deg/C for hydrogenation. Deuteration yields comparable TFT performance as hydrogenation, while deuterated TFT´s exhibit increased resistance to threshold voltage degradation under dc stress. These results indicate that deuteration is a promising alternative to hydrogenation for achieving high-performance, high-reliability poly-Si TFT´s for applications such as flat-panel displays.
Keywords :
carrier mobility; elemental semiconductors; flat panel displays; hydrogenation; passivation; plasma materials processing; semiconductor device measurement; semiconductor device reliability; silicon; thin film transistors; 300 C; 350 C; D/sub 2/; D/sub 2/ plasma treatment; H/sub 2/; H/sub 2/ plasma treatment; Si-SiO/sub 2/; dc reliability; flat-panel displays; mobility; optimum deuteration temperature; optimum hydrogenation temperature; passivation; plasma deuteration; plasma hydrogenation; polysilicon TFT performance; threshold voltage degradation; top-gate self-aligned polysilicon thin-film transistors; Annealing; Degradation; Deuterium; Hydrogen; Passivation; Plasma displays; Plasma temperature; Stress; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
