• DocumentCode
    1533669
  • Title

    Electrothermal oscillations of a PN junction operating in avalanche breakdown region

  • Author

    Brambilla, Angelo ; Premoli, Amedeo

  • Author_Institution
    Dipt. di Elettronica e Inf., Milan Univ., Italy
  • Volume
    20
  • Issue
    8
  • fYear
    1999
  • Firstpage
    405
  • Lastpage
    408
  • Abstract
    We consider a simple circuit composed of a diode operating in the avalanche breakdown region (ABR), a capacitor and a constant current source. Through a nonlinear analysis, we show the existence of oscillations caused by the combined action of thermal and electrical behaviors of the device. This analysis is confirmed by simulations and experiments.
  • Keywords
    avalanche breakdown; p-n junctions; semiconductor device breakdown; semiconductor diodes; PN junction diode; avalanche breakdown region; capacitor; constant current source; electrothermal oscillation; Avalanche breakdown; Capacitors; Circuits; Diodes; Electric variables control; Electrothermal effects; Power dissipation; Temperature control; Thermal variables control; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.778159
  • Filename
    778159
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1533669