Title :
Room temperature THz photoluminescence from IV-group semiconductors under interband excitation
Author :
Andrianov, A.V. ; Zakhar´in, A.O. ; Bobylev, A.V. ; Egorov, Sergei V.
Author_Institution :
Ioffe Physico-Tech. Inst., St. Petersburg, Russia
Abstract :
We report on the observation and study of terahertz (THz) photoluminescence (PL) from IV-group semiconductors (silicon and germanium) under continuous wave interband optical excitation at room temperature. Properties of the observed THz PL allow it to be attributed to a black-body like emission due to heating effects in the region of absorption of pump radiation.
Keywords :
III-V semiconductors; optical pumping; photoluminescence; terahertz wave imaging; IV-group semiconductors; black-body like emission; continuous wave interband optical excitation; heating effects; pump radiation absorption; room temperature THz PL; temperature 293 K to 298 K; terahertz photoluminescence; Impurities; Photoluminescence; Semiconductor lasers; Silicon; Temperature; Temperature dependence; Temperature measurement;
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
DOI :
10.1109/IRMMW-THz.2014.6956400
