Dependence of Si pn junction perimeter leakage on the channel-stop boron dose and interlayer material

The effects of the channel-stop boron dose (CSB) on the perimeter leakage current (L/sub L/) of local oxidation of silicon (LOCOS)-isolated Si pn junction diodes were found to depend on the interlayer material used. The I/sub L/ of diodes having a SiO/sub 2/ interlayer slightly decreased in the low reverse voltage (V/sub r/) region and increased in the high V/sub r/ region with a higher CSB. This is attributed to the depletion layer reduction and carrier generation enhancement caused by the higher CSB. In contrast, the I/sub L/ of TEOS-BPSG interlayer diodes increased by one order of magnitude with a higher CSB. Such anomaly is explained by an inversion layer under the LOCOS oxide: it suppresses I/sub L/ by covering the carrier generation centers, but it is compensated by the higher CSB.