A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition

Author

Shih, Po-Sheng ; Chang, Chun-Yen ; Chang, Ting-Chang ; Huang, Tiao-Yuan ; Peng, Du-Zen ; Yeh, Ching-Fa

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

20

Issue

8

fYear

1999

Firstpage

421

Lastpage

423

Abstract

We have proposed and successfully demonstrated a novel process for fabricating lightly doped drain (LDD) polycrystalline silicon thin-film transistors (TFT´s). The oxide sidewall spacer in the new process is formed by a simple one-step selective liquid phase deposition (LPD) oxide performed at 23/spl deg/C. Devices fabricated with the new process exhibit a lower leakage current and a better ON/OFF current ratio than non-LDD control devices. Since the apparatus used for LPD oxide deposition is simple and inexpensive, the new process appears to be quite promising for future high-performance poly-Si TFT fabrication.

Keywords

elemental semiconductors; leakage currents; liquid phase deposition; silicon; thin film transistors; 23 C; LDD polysilicon TFT; ON/OFF current ratio; Si; fabrication; leakage current; lightly doped drain polycrystalline silicon thin film transistor; liquid phase deposition; oxide sidewall spacer; Active matrix liquid crystal displays; Amorphous silicon; Etching; Fabrication; Gray-scale; Leakage current; Liquid crystal displays; Silicon compounds; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.778164

Filename

778164