DocumentCode
1533712
Title
Design and characterization of high-voltage self-clamped IGBT´s
Author
Shen, Z. John ; Briggs, Dave ; Robb, Stephen P.
Author_Institution
Semicond. Components Group, Motorola Inc., Phoenix, AZ, USA
Volume
20
Issue
8
fYear
1999
Firstpage
424
Lastpage
427
Abstract
A new concept of field limiting ring (FLR) with variable ring widths is proposed for designing a high-voltage collector-gate clamped IGBT. An insulated gate bipolar transistor (IGBT) based on the concept has been designed and fabricated with a conventional IGBT process flow to provide a clamp voltage of 620 V. The dc and unclamped inductive switching (UIS) energy parameters of the IGBT are fully characterized for a temperature range of -40-150/spl deg/C. The new high-voltage self-clamped IGBT is to be primarily used in automotive ignition applications.
Keywords
insulated gate bipolar transistors; -40 to 150 C; 620 V; automotive ignition; design; field limiting ring; high-voltage self-clamped IGBT; insulated gate bipolar transistor; unclamped inductive switching; Automotive engineering; Clamps; Coils; Driver circuits; Ignition; Insulated gate bipolar transistors; Plugs; Semiconductor diodes; Sparks; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.778165
Filename
778165
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