DocumentCode
1534111
Title
Intermodulation in transistors
Author
Reynolds, Jack
Author_Institution
Institute of Physics University of Lund Lund, Sweden
Volume
12
Issue
1
fYear
1963
Firstpage
88
Lastpage
92
Abstract
By extending the conventional small signal theory of diffusion currents in transistors to include third order effects, intermodulation is shown to result from modulation of the input admittance and forward transfer admittance. A relationship, which is independent of the transistor parameters, between the intermodulation figure of merit and the input terminal voltage is analytically developed and experimentally verified.
fLanguage
English
Journal_Title
IEEE Transactions on Vehicular Communications
Publisher
ieee
ISSN
0096-2503
Type
jour
DOI
10.1109/TVC.1963.6499386
Filename
6499386
Link To Document