Title :
Hybrid integration of smart pixels by using polyimide bonding: demonstration of a GaAs p-i-n photodiode/CMOS receiver
Author :
Nakahara, Tatsushi ; Tsuda, Hiroyuki ; Tateno, Kouta ; Matsuo, Shinji ; Kurokawa, Takashi
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
Abstract :
The fabrication procedure of smart pixels based on a hybrid integration of compound semiconductor photonic devices with silicon CMOS circuits is described. According to the 0.8-μm design rule, CMOS receiver/transmitter circuits are designed for use in vertical-cavity surface-emitting laser (VCSEL)-based smart pixels, and 16×16 and 2×2 Banyan-switch smart-pixel chips are also designed. By using our polyimide bonding technique, we integrated GaAs pin-photodiodes hybridly on the CMOS circuits. The photodetector (PD)/CMOS hybrid receiver operated error free at up to 800 Mb/s. Successful optical/optical (O/O) operation (a bit rate up to 311 Mbit/s) of the 2×2 Banyan-switch smart-pixel chip implemented with another VCSEL chip is also demonstrated
Keywords :
CMOS integrated circuits; electro-optical switches; gallium arsenide; integrated circuit technology; integrated optoelectronics; optical receivers; optical transmitters; p-i-n photodiodes; smart pixels; 0.8-μm design rule; 2×2 Banyan-switch smart-pixel chip; 311 Mbit/s; 800 Mbit/s; Banyan-switch smart-pixel chips; CMOS receiver/transmitter circuits; GaAs; GaAs p-i-n photodiode/CMOS receiver; GaAs pin-photodiodes; VCSEL chip; VCSEL-based smart pixels; error free; fabrication procedure; hybrid integration; optical/optical operation; polyimide bonding; polyimide bonding technique; semiconductor photonic devices; silicon CMOS circuits; smart pixel; smart pixels; vertical-cavity surface-emitting lase; Bonding; Circuits; Optical design; Optical device fabrication; Optical receivers; Optical transmitters; Polyimides; Silicon; Smart pixels; Vertical cavity surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.778287
