DocumentCode :
153427
Title :
Broadly tunable external cavity terahertz source from 1.2∼5.9 THz
Author :
Yifan Jiang ; Vijayraghavan, Karun ; Seungyong Jung ; Demmerle, F. ; Boehm, G. ; Amann, Markus C. ; Belkin, Mikhail A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
fYear :
2014
fDate :
14-19 Sept. 2014
Firstpage :
1
Lastpage :
2
Abstract :
We present room-temperature broadly tunable external cavity terahertz sources based on Cherenkov intra-cavity difference frequency generation in mid-infrared quantum cascade lasers bonded with Si substrate. Laser chips are integrated into a Littrow-type external cavity system. Devices demonstrate continuous THz emission tuning from 1.2 THz to 5.9 THz at room temperature with peak power output varying between 5 and 45 μW, depending on the operating frequency.
Keywords :
optical frequency conversion; quantum cascade lasers; silicon; submillimetre wave lasers; Cherenkov intracavity difference frequency generation; Littrow-type external cavity system; Si; THz emission tuning; frequency 1.2 THz to 5.9 PHz; midinfrared quantum cascade laser chips; operating frequency; peak power output; power 5 muW to 45 muW; room-temperature broadly tunable external cavity terahertz sources; Beam steering; Gratings; Indium phosphide; Quantum cascade lasers; Silicon; Substrates; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
Type :
conf
DOI :
10.1109/IRMMW-THz.2014.6956430
Filename :
6956430
Link To Document :
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