Broadly tunable external cavity terahertz source from 1.2∼5.9 THz

Author

Yifan Jiang ; Vijayraghavan, Karun ; Seungyong Jung ; Demmerle, F. ; Boehm, G. ; Amann, Markus C. ; Belkin, Mikhail A.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA

fYear

2014

fDate

14-19 Sept. 2014

Firstpage

1

Lastpage

2

Abstract

We present room-temperature broadly tunable external cavity terahertz sources based on Cherenkov intra-cavity difference frequency generation in mid-infrared quantum cascade lasers bonded with Si substrate. Laser chips are integrated into a Littrow-type external cavity system. Devices demonstrate continuous THz emission tuning from 1.2 THz to 5.9 THz at room temperature with peak power output varying between 5 and 45 μW, depending on the operating frequency.

Keywords

optical frequency conversion; quantum cascade lasers; silicon; submillimetre wave lasers; Cherenkov intracavity difference frequency generation; Littrow-type external cavity system; Si; THz emission tuning; frequency 1.2 THz to 5.9 PHz; midinfrared quantum cascade laser chips; operating frequency; peak power output; power 5 muW to 45 muW; room-temperature broadly tunable external cavity terahertz sources; Beam steering; Gratings; Indium phosphide; Quantum cascade lasers; Silicon; Substrates; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on

Conference_Location

Tucson, AZ

Type

conf

DOI

10.1109/IRMMW-THz.2014.6956430

Filename

6956430