Analysis of random dopant-induced effects through numerical solution of randomly perturbed nonlinear Poisson equation

Author

Mayergoyz, I.D. ; Andrei, P. ; Filipovich, I.

Author_Institution

Dept. of Electr. & Comput. Eng., Maryland Univ., College Park, MD, USA

Volume

37

Issue

5

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

3155

Lastpage

3158

Abstract

A new approach to the analysis of random dopant-induced effects in semiconductor devices is proposed. This approach is based on numerical solution of randomly perturbed nonlinear Poisson equation by using a “small signal analysis” (perturbation) technique. This technique is computationally much more efficient than the existing “statistical” techniques and it yields the information that can be directly used for the design of dopant fluctuation-resistant structures of semiconductor devices

Keywords

Poisson equation; doping profiles; nonlinear equations; semiconductor device models; dopant fluctuation-resistant structures; numerical solution; perturbation technique; random dopant-induced effects; randomly perturbed nonlinear Poisson equation; semiconductor devices; small signal analysis; Boundary conditions; Electric potential; Fluctuations; MOSFET circuits; Poisson equations; Semiconductor device doping; Semiconductor devices; Signal analysis; Statistical distributions; Threshold voltage;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.952565

Filename

952565