Title :
Contribution to optimization of GaAs/Ga1-xAlxAs multiquantum-well acousto-electrooptic modulator
Author :
Bahlak, S. ; Gazalet, J. ; Lefebvre, J.E. ; Gryba, T. ; Zhang, V.
Author_Institution :
IEMN-DOAE-UMR, Univ. de Valenciennes et du Hainaut Cambresis, France
fDate :
8/1/1999 12:00:00 AM
Abstract :
A theoretical study concerning a GaAs-Ga1-xAlx As acousto-electrooptic (AEO) modulator is presented. This study deals with the effects of electric and strain fields generated by a piezoactive surface acoustic wave (SAW) on the optical absorption edge, acoustical field components decrease with depth and thus limit device performances. An optimization based on an additional ZnO layer and on technological parameters fitting, well width and potential barrier height, is proposed
Keywords :
III-V semiconductors; acousto-optical modulation; aluminium compounds; electro-optical modulation; gallium arsenide; integrated optics; optimisation; quantum confined Stark effect; quantum well devices; semiconductor device models; surface acoustic wave devices; GaAs-GaAlAs; GaAs/Ga1-xAlxAs multiquantum-well acousto-electrooptic modulator; ZnO; acoustical field components; additional ZnO layer; electric fields; limit device performance; optical absorption edge; optimization; piezoactive surface acoustic wave; potential barrier height; strain fields; technological parameters; Absorption; Acoustic waves; Capacitive sensors; Optical devices; Optical modulation; Optical surface waves; Surface acoustic wave devices; Surface acoustic waves; Surface fitting; Zinc oxide;
Journal_Title :
Lightwave Technology, Journal of
