DocumentCode :
1534637
Title :
Pulse Broadening in Quantum-Dot Mode-Locked Semiconductor Lasers: Simulation, Analysis, and Experiments
Author :
Radziunas, Mindaugas ; Vladimirov, Andrei G. ; Viktorov, Evgeny A. ; Fiol, Gerrit ; Schmeckebier, Holger ; Bimberg, Dieter
Author_Institution :
Weierstrass Inst., Berlin, Germany
Volume :
47
Issue :
7
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
935
Lastpage :
943
Abstract :
We consider a mode-locked (ML) quantum-dot (QD) edge-emitting semiconductor laser consisting of a reverse-biased saturable absorber and a forward-biased amplifying section. To describe the dynamics of this laser, we use the traveling wave model taking into account carrier exchange processes between a reservoir and the QDs. A comprehensive parameter study is presented and an analysis of mode-locking pulse broadening with an increase of injection current is performed. The results of our theoretical analysis are supported by experimental data demonstrating a strong pulse asymmetry in a monolithic two-section QD laser.
Keywords :
laser mode locking; optical saturable absorption; quantum dot lasers; spectral line broadening; carrier exchange; edge-emitting semiconductor laser; forward-biased amplification; injection current; monolithic two-section laser; pulse asymmetry; pulse broadening; quantum-dot mode-locked semiconductor lasers; reverse-biased saturable absorber; traveling wave model; Equations; Laser mode locking; Laser theory; Mathematical model; Quantum dot lasers; Mode-locking; pulse broadening; quantum dots; saturable absorber; semiconductor laser; trailing edge;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2011.2142294
Filename :
5784363
Link To Document :
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