Title :
Effects of the shape anisotropy on the giant magnetoresistance properties
Author :
Kim, K.Y. ; Lim, S.H. ; Park, G.S. ; Blamire, M.H. ; Evetts, J.E.
Author_Institution :
Korea Inst. of Sci. & Technol., Seoul, South Korea
fDate :
9/1/2001 12:00:00 AM
Abstract :
For the application of giant magnetoresistance (GMR) devices such as magnetic recording head or magnetic field sensors, spin valves are patterned on micron scales. In an attempt to understand shape anisotropy effect and switching behaviors of patterned structure, we measured GMR responses of patterned stripes with different aspect ratios and angular dependence of GMR responses with respect to the applied field angles. In case of lower aspect ratio (20:6), MR ratio decreased gradually with the increase in angle between applied field and pinning direction. In case of high aspect ratio (20:2), MR ratio did not decrease up to a certain angle, after that down to the lower value rapidly. In addition, there is increase in coercivities of free and pinned layers, which is due to the shape anisotropy with respect to the high aspect ratio. This trend agrees well with the simulated GMR curves using single domain model where we consider on self-demagnetization and interlayer magnetostatic coupling effects
Keywords :
coercive force; giant magnetoresistance; magnetic anisotropy; magnetic switching; magnetoresistive devices; spin valves; GMR device; angular dependence; aspect ratio; coercivity; giant magnetoresistance; interlayer magnetostatic coupling; magnetic field sensor; magnetic recording head; patterned stripe structure; pinned layer; self-demagnetization; shape anisotropy; single domain model; spin valve; switching properties; Anisotropic magnetoresistance; Coercive force; Giant magnetoresistance; Magnetic anisotropy; Magnetic field measurement; Magnetic heads; Magnetic recording; Magnetic sensors; Shape measurement; Spin valves;
Journal_Title :
Magnetics, IEEE Transactions on