Title :
Equivalent Sheet Resistance of Intrinsic Noise in Sub-100-nm MOSFETs
Author :
Chen, Chih-Hung ; Lee, Ryan ; Tan, Ge ; Chen, David C. ; Lei, Peiming ; Yeh, Chune-Sin
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, ON, Canada
Abstract :
This paper presents the equivalent sheet resistance for the intrinsic channel thermal noise of sub-100-nm MOSFETs for the first time. This newly defined noise sheet resistance is particularly helpful when comparing the noise performance of devices in different technology nodes for low-noise applications. Experimental results for devices in 130-, 90-, and 65-nm CMOS technology nodes are demonstrated. Strategies for the development of future low-noise technologies are suggested.
Keywords :
MOSFET; equivalent circuits; semiconductor device noise; thermal noise; CMOS technology; MOSFET; equivalent sheet resistance; intrinsic channel thermal noise; intrinsic noise; size 130 nm; size 65 nm; size 90 nm; MOSFETs; Noise; Performance evaluation; Resistance; Thermal noise; Channel thermal noise; noise parameters; noise sheet resistance; sub-100-nm MOSFETs;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2198651
