Title :
AlGaInAs/InP double heterostructure lasers grown by low-pressure metal organic vapour-phase epitaxy for emission at 1300 nm
Author :
Davies, J.I. ; Williams, P.J. ; Scott, M.D. ; Carter, A.C.
Author_Institution :
Plessey Res. Ltd., Caswell, Towcester
fDate :
6/9/1988 12:00:00 AM
Abstract :
Reports for the first time the growth and fabrication of laser diodes for emission near 1300 nm in the AlGaInAs/InP alloy system by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Threshold current density was 4.8 kA/cm2 with associated T0 of 88°C in the range 7-60°C
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1300 nm; 7 to 60 C; AlGaInAs-InP lasers; LP-MOVPE; double heterostructure; fabrication; growth; laser diodes; metal organic vapour-phase epitaxy; semiconductors; threshold current density;
Journal_Title :
Electronics Letters
