• DocumentCode
    1535072
  • Title

    AlGaInAs/InP double heterostructure lasers grown by low-pressure metal organic vapour-phase epitaxy for emission at 1300 nm

  • Author

    Davies, J.I. ; Williams, P.J. ; Scott, M.D. ; Carter, A.C.

  • Author_Institution
    Plessey Res. Ltd., Caswell, Towcester
  • Volume
    24
  • Issue
    12
  • fYear
    1988
  • fDate
    6/9/1988 12:00:00 AM
  • Firstpage
    732
  • Lastpage
    733
  • Abstract
    Reports for the first time the growth and fabrication of laser diodes for emission near 1300 nm in the AlGaInAs/InP alloy system by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Threshold current density was 4.8 kA/cm2 with associated T0 of 88°C in the range 7-60°C
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1300 nm; 7 to 60 C; AlGaInAs-InP lasers; LP-MOVPE; double heterostructure; fabrication; growth; laser diodes; metal organic vapour-phase epitaxy; semiconductors; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5785
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1535072