Title :
InP double heterojunction bipolar transistor as sub-terahertz detector
Author :
Coquillat, Dominique ; Nodjiadjim, V. ; Konczykowska, Agnieszka ; Riet, M. ; Dyakonova, N. ; Consejo, C. ; Teppe, F. ; Godin, J. ; Knap, Wojciech
Author_Institution :
GIS Teralab, Univ. Montpellier 2, Montpellier, France
Abstract :
We report on room-temperature detection of sub-terahertz radiation by InP double heterojunction bipolar transistors designed for 100 Gbit/s circuit applications. Maximum responsivity of 250 V/W around 272 GHz were achieved at room-temperature under unbiased base-emitter and base-collector conditions. We show also that these detectors can operate as sensitive broadband THz detectors in THz imaging systems.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; millimetre wave detectors; millimetre wave imaging; submillimetre wave detectors; submillimetre wave imaging; submillimetre wave transistors; terahertz wave detectors; terahertz wave imaging; InP; bit rate 100 Gbit/s; broadband terahertz detector; double heterojunction bipolar transistor; subterahertz detector; terahertz imaging; Detectors; Double heterojunction bipolar transistors; Frequency modulation; Imaging; Indium phosphide; Wireless communication;
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
DOI :
10.1109/IRMMW-THz.2014.6956515
