InP double heterojunction bipolar transistor as sub-terahertz detector

Author

Coquillat, Dominique ; Nodjiadjim, V. ; Konczykowska, Agnieszka ; Riet, M. ; Dyakonova, N. ; Consejo, C. ; Teppe, F. ; Godin, J. ; Knap, Wojciech

Author_Institution

GIS Teralab, Univ. Montpellier 2, Montpellier, France

fYear

2014

fDate

14-19 Sept. 2014

Firstpage

1

Lastpage

2

Abstract

We report on room-temperature detection of sub-terahertz radiation by InP double heterojunction bipolar transistors designed for 100 Gbit/s circuit applications. Maximum responsivity of 250 V/W around 272 GHz were achieved at room-temperature under unbiased base-emitter and base-collector conditions. We show also that these detectors can operate as sensitive broadband THz detectors in THz imaging systems.

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; millimetre wave detectors; millimetre wave imaging; submillimetre wave detectors; submillimetre wave imaging; submillimetre wave transistors; terahertz wave detectors; terahertz wave imaging; InP; bit rate 100 Gbit/s; broadband terahertz detector; double heterojunction bipolar transistor; subterahertz detector; terahertz imaging; Detectors; Double heterojunction bipolar transistors; Frequency modulation; Imaging; Indium phosphide; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on

Conference_Location

Tucson, AZ

Type

conf

DOI

10.1109/IRMMW-THz.2014.6956515

Filename

6956515