• DocumentCode
    1535195
  • Title

    Design of Doherty Power Amplifiers for Handset Applications

  • Author

    Kang, Daehyun ; Choi, Jinsung ; Kim, Dongsu ; Kim, Bumman

  • Author_Institution
    Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
  • Volume
    58
  • Issue
    8
  • fYear
    2010
  • Firstpage
    2134
  • Lastpage
    2142
  • Abstract
    In this paper, we analyze the power drive of a Doherty power amplifier (PA), and introduce a technique for proper input dividing without a coupler. For the proper Doherty operation, we place a phase compensation circuit at the input of the carrier amplifier. We also propose an output matching of Doherty PA to reduce the number of matching components, and to match the output impedances to enhance efficiency and linearity in consideration of the uneven input drive. The PA circuit is fabricated using a 2-μm InGaP/GaAs heterojunction bipolar transistor process and combined for Doherty operation using merged lumped components. For the IEEE 802.16e m-WiMAX signal, which has a 9.54-dB crest factor and 8.75-MHz bandwidth, the PA has an error vector magnitude of 3% and a power-added efficiency of 40.2% at an output power of 26 dBm.
  • Keywords
    III-V semiconductors; MMIC amplifiers; WiMax; gallium arsenide; heterojunction bipolar transistors; impedance matching; indium compounds; microwave power amplifiers; mobile handsets; wide band gap semiconductors; Doherty power amplifier design; IEEE 802.16e m-WiMAX signal; InGaP-GaAs; MMIC; bandwidth 8.75 MHz; carrier amplifier; coupler; crest factor; efficiency 40.2 percent; error vector magnitude; heterojunction bipolar transistor process; merged lumped components; monolithic microwave integrated circuit; output impedance matching; phase compensation circuit; power-added efficiency; size 2 mum; Bandwidth; Coupling circuits; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; Linearity; Operational amplifiers; Power amplifiers; Power generation; Telephone sets; Doherty; efficient; handset; heterojunction bipolar transistors (HBTs); linear; monolithic microwave integrated circuit (MMIC); power amplifier (PA);
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2010.2053074
  • Filename
    5510007