Terahertz detector using 70-nm T-gate InAlAs/InGaAs HEMT integrated with bow-tie antenna

Author

Miyajima, Y. ; Nukariya, T. ; Suzuki, Satoshi

Author_Institution

Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2014

fDate

14-19 Sept. 2014

Firstpage

1

Lastpage

2

Abstract

A terahertz detector using an InAlAs/InGaAs high-electron-mobility-transistor (HEMT) integrated with a bow-tie antenna was proposed and fabricated. By utilizing ballistic transport in the short-channel, a current sensitivity of 1.5 A/W at 280 GHz was achieved by the detector having 70-nm T-gate HEMT without applying drain bias. We also measured the drain bias dependence of current sensitivity on the 50-nm-gate HEMT detector, and obtained a high current sensitivity of ~5 A/W at drain bias of >0.2 V.

Keywords

aluminium compounds; bow-tie antennas; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave transistors; terahertz wave detectors; HEMT detector; InAlAs-InGaAs; T-gate InAlAs-InGaAs HEMT; ballistic transport; bow-tie antenna; current sensitivity; drain bias dependence; frequency 280 GHz; high electron mobility transistor; short channel; size 50 nm; size 70 nm; terahertz detector; Antenna measurements; Antennas; Current measurement; Detectors; HEMTs; Logic gates; Sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on

Conference_Location

Tucson, AZ

Type

conf

DOI

10.1109/IRMMW-THz.2014.6956520

Filename

6956520