Title :
Detection of terahertz and mid-infrared radiations by InP-based asymmetric dual-grating-gate HEMTs
Author :
Coquillat, Dominique ; Zagrajek, Przemyslaw ; Dyakonova, N. ; Chrzanowski, K. ; Marczewski, J. ; Kurita, Yuichi ; Satou, Akira ; Kobayashi, Kaoru ; Tombet, S. Boubanga ; Popov, V.V. ; Suemitsu, Tetsuya ; Otsuji, Taiichi ; Knap, Wojciech
Author_Institution :
GIS Teralab, Univ. Montpellier 2, Montpellier, France
Abstract :
We report on room-temperature plasmonic detection of the thermal emission from a black body in the terahertz and mid-infrared domains by dual-grating-gate InAlAs/InGaAs/InP high electron mobility transistors (HEMTs). In such detectors, the asymmetric grating gate of a large area acts as an effective antenna that improves the performance in the two spectral domains.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; high electron mobility transistors; indium compounds; infrared detectors; terahertz wave detectors; InAlAs-InGaAs-InP; asymmetric dual-grating-gate HEMT; black body; effective antenna; high electron mobility transistors; mid-infrared radiations; room-temperature plasmonic detection; temperature 293 K to 298 K; terahertz detection; thermal emission; Broadband communication; Detectors; Gratings; HEMTs; Logic gates; MODFETs; Plasmons;
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
DOI :
10.1109/IRMMW-THz.2014.6956522
