Title :
Imaging of a THz beam with Si-MOSFET detectors
Author :
Yavorskiy, D. ; Kopyt, P. ; Marczewski, J. ; Lusakowski, J.
Author_Institution :
Fac. of Phys., Univ. of Warsaw, Warsaw, Poland
Abstract :
Silicon metal-oxide-semiconductor field-effect transistors with four different types of planar antennas were used to scan the cross section of radiation beams of 0.1 THz and 0.336 THz. Transistors were mounted on a support and bonded with Au wires. We show that the map of the power distribution in the beam cross-section depends on details of mounting of a transistor (in particular, on a configuration of bonding wires) as well as on the orientation of the antenna with respect to the direction of the radiation polarization.
Keywords :
MOSFET; planar antennas; silicon; terahertz wave imaging; Au; Si; Si-MOSFET detectors; antenna orientation; bonding wire configuration; frequency 0.1 THz; frequency 0.336 THz; metal-oxide-semiconductor field-effect transistors; planar antennas; power distribution; radiation beam cross section; radiation polarization direction; terahertz imaging; Antennas; Bonding; Detectors; Field effect transistors; Imaging; Wires;
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on
Conference_Location :
Tucson, AZ
DOI :
10.1109/IRMMW-THz.2014.6956523
