Terahertz detectors based on a gated two-dimensional electron plasma in CdMnTe/CdMgTe quantum wells

Author

Grigelionis, I. ; Grynberg, M. ; Adamus, Z. ; Karczewski, G. ; Wojtowicz, T. ; Lusakowski, J.

Author_Institution

Fac. of Phys., Univ. of Warsaw, Warsaw, Poland

fYear

2014

fDate

14-19 Sept. 2014

Firstpage

1

Lastpage

2

Abstract

Fabrication of compact detectors and emitters is essential for development of THz technology. Field-effect transistors (FETs) are promising current- and voltage-driven suitable for this purpose. We report on a THz detection with FETs fabricated on a CdMnTe/CdMgTe quantum well. Both resonant and non-resonant detection in magnetic fields and at low temperatures is demonstrated with a possibility to switch-off the resonant detection with a gate voltage.

Keywords

II-VI semiconductors; cadmium compounds; field effect transistors; magnesium compounds; manganese compounds; semiconductor quantum wells; solid-state plasma; terahertz wave detectors; two-dimensional electron gas; wide band gap semiconductors; CdMnTe-CdMgTe; THz detection; THz technology; compact detectors; emitters; field-effect transistors; gate voltage; gated two-dimensional electron plasma; magnetic fields; nonresonant detection; quantum wells; resonant detection; terahertz detectors; Field effect transistors; Logic gates; Magnetic field measurement; Magnetic fields; Measurement by laser beam; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2014 39th International Conference on

Conference_Location

Tucson, AZ

Type

conf

DOI

10.1109/IRMMW-THz.2014.6956524

Filename

6956524