DocumentCode
1535305
Title
Erbium-doped GaAs light-emitting diodes emitting erbium f-shell luminescence at 1.54 μm
Author
Uwai, K. ; Nakagome, Hideki ; Takahei, K.
Volume
24
Issue
12
fYear
1988
fDate
6/9/1988 12:00:00 AM
Firstpage
740
Lastpage
741
Abstract
GaAs light-emitting diodes emitting at 1.54 μm have been fabricated using Er-doped GaAs grown by metal organic chemical vapour deposition, and the output characteristics are reported for the first time. Characteristic emission from the internal 4f-shell transitions of erbium is observed even at room temperature, and the wavelength shifts by less than the measurement resolution of 1 nm over the temperature range from 180 K to 296 K. These results confirm the possibility of fabricating stable light sources using rare earth doped semiconductors
Keywords
III-V semiconductors; electroluminescence; erbium; gallium arsenide; light emitting diodes; semiconductor doping; 1.54 micron; 180 to 296 K; GaAs:Er light emitting diodes; LED; f-shell luminescence; internal 4f-shell transitions; metal organic chemical vapour deposition; output characteristics; room temperature; semiconductors; stable light sources; temperature range; wavelength shifts;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
5791
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