Title :
A 1.2-million transistor, 33-MHz, 20-b dictionary search processor (DISP) ULSI with a 160-kb CAM
Author :
Motomura, Masato ; Toyoura, Jun ; Hirata, Kazumi ; Ooka, Hideyuki ; Yamada, Hachiro ; Enomoto, Tadayoshi
Author_Institution :
NEC Corp., Kanagawa, Japan
fDate :
10/1/1990 12:00:00 AM
Abstract :
A 1.2-million transistor, 33-MHz, 20-b dictionary search processor (DISP) ULSI has been developed using a 0.8-μm triple-layer-Al, CMOS fabrication technology. A 13.02×12.51-mm2 chip contains a specially developed 160-kb content addressable memory (CAM) and cellular automation processor (CAP). A single DISP chip can store a maximum of 2048 words, and performs dictionary search in various search modes, including an approximate word search. The character input rate for the dictionary search operation is 33 million characters per second. The DISP typically consumes 800 mW at a supply voltage of 5 V. A high-speed, functional 50000 word dictionary search system can be built with 25 DISP chips arranged in parallel, to play an important role in natural language processing
Keywords :
CMOS integrated circuits; content-addressable storage; microprocessor chips; 160 kbit; 20 bit; 33 MHz; 5 V; 800 mW; Al; CAM; CMOS fabrication technology; DISP chip; ULSI; approximate word search; content addressable memory; dictionary search processor; natural language processing; parallel connected chips; triple-layer-Al; Associative memory; Automation; CADCAM; CMOS process; CMOS technology; Computer aided manufacturing; Dictionaries; Fabrication; Ultra large scale integration; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
