DocumentCode :
1535593
Title :
Reverse Temperature Dependence of Circuit Performance in High- 
/Metal-Gate Technology
Author :
Han, Shu-Jen ; Guo, Dechao ; Wang, Xinlin ; Mocuta, Anda C. ; Henson, William K. ; Rim, Ken
Author_Institution :
IBM T J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
30
Issue :
12
fYear :
2009
Firstpage :
1344
Lastpage :
1346
Abstract :
The temperature dependence of ring-oscillator delay of high-kappa /metal-gate (HKMG) and poly-Si/SiON technologies are analyzed. HKMG gate stacks drive significantly stronger threshold temperature dependence over poly-Si/SiON. This effect, together with the reduced mobility temperature sensitivity, result in higher drive current at elevated temperature for HKMG devices. This is in contrast to poly-Si/SiON technology where the low-driven current performance-limiting corner is typically at high temperature.
Keywords :
MOSFET; electron mobility; high-k dielectric thin films; oscillators; silicon; silicon compounds; thermal analysis; CMOS device characteristics; NFET; Si-SiON; drive current; electron mobility; high-kappa-metal-gate technology; reduced mobility temperature sensitivity; reverse temperature dependence; ring-oscillator delay; High-$kappa$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2033082
Filename :
5308312
Link To Document :
