Title :
Surface Emission Vertical Cavity Transistor Laser
Author :
Wu, Mong-Kai ; Feng, Milton ; Holonyak, Nick
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
We demonstrate the first surface emission vertical cavity transistor laser (VCTL) operation with an InGaP heterojunction bipolar transistor incorporating the InGaAs quantum-wells in the base and vertical distributed Bragg reflectors. The transistor collector I-V characteristics show gain (β = ΔIc/ΔIB) compression, β decreasing from 0.52 to 0.47, due to the base recombination shifting from spontaneous to stimulated with increasing base current (IB >; ITH). The surface emission VCTL threshold current is ITH ~ 3 mA for a cavity of 9×6 μm2 lateral dimensions. The laser spectra at IB = 10 mA exhibit two peaks at 975.12 and 975.22 nm with linewidth Δλ ~ 0.7 Å.
Keywords :
III-V semiconductors; distributed Bragg reflectors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; surface emitting lasers; I-V characteristics; InGaAs; InGaAs quantum wells; InGaP; InGaP heterojunction bipolar transistor; VCTL operation; base recombination shifting; distributed Bragg reflectors; laser spectra; surface emission vertical cavity laser; transistor collector; transistor laser; Cavity resonators; Distributed Bragg reflectors; Heterojunction bipolar transistors; Radiative recombination; Vertical cavity surface emitting lasers; Transistor laser; vertical cavity;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2203356
