Title :
Application of BEM to high-voltage junction termination
Author :
Wu, Zilu ; Gao, Yumin ; Luo, Jinsheng ; Hou, Xun ; Chen, Guofu
Author_Institution :
State Key Lab. of Transient Opt. Technol., Acad. of Sci., Xi´´an, China
fDate :
10/1/2001 12:00:00 AM
Abstract :
Ideas for using the boundary element method (BEM) with the concept of critical electric field for simulation of high-voltage junction termination are introduced. Approaches for dealing with interface charges, depleted regions, and metal field plates are presented. Rules used to develop and apply the BEM program are given. Simulation of one silicon-on-insulator diode is performed and the results are compared with those obtained using the finite difference method
Keywords :
boundary-elements methods; electric fields; finite difference methods; p-n junctions; power semiconductor diodes; semiconductor device breakdown; silicon-on-insulator; BEM; SOI; Si; boundary element method; critical electric field; depleted regions; finite difference method; high-voltage junction termination; interface charges; metal field plates; Boundary element methods; Convergence; Design optimization; Diodes; Electric potential; Finite difference methods; Finite element methods; P-n junctions; Silicon on insulator technology; Voltage;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
