DocumentCode
1535735
Title
Harmonic distortion due to output conductance in SI cells
Author
Martins, J. ; Dias, V.
Author_Institution
IST/INESC, Lisbon, Portugal
Volume
33
Issue
2
fYear
1997
fDate
1/16/1997 12:00:00 AM
Firstpage
127
Lastpage
128
Abstract
A closed-form equation for the effect of the output conductance on the harmonic distortion in switched-current basic memory cells is presented here. The authors show that in memory cells with short channel transistors, the variation of the output conductance can generate high levels of harmonic distortion (-51 dB for L=2 μm using a 1.2 μm CMOS technology); however a suitable relation of transistor lengths can lead to very low distortion levels. The results are confirmed both by simulation and measurements on an IC prototype
Keywords
CMOS analogue integrated circuits; CMOS memory circuits; analogue storage; harmonic distortion; switched current circuits; 1.2 micron; CMOS technology; IC; SI cell; harmonic distortion; output conductance; short channel transistor; switched-current memory cell;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970079
Filename
579422
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