Title :
Modeling of Polysilicon Depletion Effect in Recessed-Channel MOSFETs
Author :
Kang, Yeonsung ; Kim, Heesang ; Lee, Jaeho ; Son, Younghwan ; Park, Byung-Gook ; Lee, Jong Duk ; Shin, Hyungcheol
Author_Institution :
Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea
Abstract :
The polysilicon depletion effect is one of the key factors that degrade MOSFETs´ performance. In this letter, a polysilicon depletion model for recessed-channel (RC) MOSFETs is presented. The model shows good agreement with numerical device simulation results. We also compare the polysilicon depletion effect of RC MOSFETs to that of planar MOSFETs.
Keywords :
MOSFET; semiconductor device models; numerical device simulation; polysilicon depletion effect; recessed-channel MOSFET; Device modeling; gate depletion; poly depletion effect; polysilicon depletion effect; recessed-channel (RC) MOSFETs;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2034278
