Title :
10W near-diffraction-limited peak pulsed power from Al-free, 0.98 μm-emitting phase-locked antiguided arrays
Author :
Yang, H. ; Mawst, L.J. ; Nesnidal, M. ; Lopez, J. ; Bhattacharya, A. ; Botez, D.
Author_Institution :
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
fDate :
1/16/1997 12:00:00 AM
Abstract :
10 W peak-pulsed power emitted in a beam pattern 2×diffraction limit (DL) is obtained from a 40-element, 200 μm-aperture Al-free phase-locked antiguided array (λ=0.98 μm). 60% of the power resides in the central lobe, and the external differential quantum efficiency is 54%, for 1 mm-long optimised facet-coated devices
Keywords :
integrated optics; laser transitions; optical waveguides; semiconductor laser arrays; 0.98 micron; 10 W; 54 percent; Al-free arrays; central lobe; external differential quantum efficiency; near-diffraction-limited peak pulsed power; optimised facet-coated devices; phase-locked antiguided arrays; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970099
