DocumentCode :
1535806
Title :
High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5 μm surface emitting lasers
Author :
Genty, F. ; Almuneau, G. ; Chusseau, L. ; Boissier, G. ; Malzac, J.-P. ; Salet, P. ; Jacquet, J.
Author_Institution :
Centre d´´Electron. et de Micro-Optoelectronique, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Volume :
33
Issue :
2
fYear :
1997
fDate :
1/16/1997 12:00:00 AM
Firstpage :
140
Lastpage :
142
Abstract :
A high reflectivity GaAsSb/AlAsSb Bragg mirror lattice matched to InP is reported. Operation at 1.5 μm is obtained owing to a large Burstein-Moss shift of GaAsSb absorption caused by a strong N-doping up to 1019 cm-2. Peak reflectivity up to 94% has been measured with only 11.5 periods
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; laser mirrors; laser transitions; reflectivity; semiconductor lasers; surface emitting lasers; tellurium; 1.5 micron; AlAsSb-GaAsSb:Te,N-InP; Bragg mirror; Burstein-Moss shift; GaAsSb absorption; Te doping; VCSEL; high reflectivity mirror; lattice match; strong N doping; surface emitting lasers; vertical cavity SEL;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970112
Filename :
579438
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1535806
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