Title :
InP/InGaAs double-HBT technology for high bit-rate communication circuits
Author :
Caffin, D. ; Bouché, M. ; Meghelli, M. ; Duchenois, A.M. ; Launay, P.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
fDate :
1/16/1997 12:00:00 AM
Abstract :
A InP/InGaAs DHBT technology has been developed to meet the high speed requirements of circuits required in 20 Gbit/s optical communication links. High performance devices were achieved with a current gain over 100 and cutoff frequencies of >50 GHz. The technology showed excellent behaviour in terms of yield and homogeneity. Over 2O Gbit/s digital ICs were realised: among them, a 20 Gbit/s external modulator driver, and a 32 Gbit/s 2:1 multiplexer
Keywords :
III-V semiconductors; bipolar digital integrated circuits; driver circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit technology; multiplexing equipment; optical communication equipment; 20 Gbit/s; 32 Gbit/s; 50 GHz; DHBT technology; InP-InGaAs; digital ICs; double-HBT technology; external modulator driver; high bit-rate communication circuits; multiplexer; optical communication links;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970069
