Title :
Measurement of a VPE-transported DFB laser with blue-shifted frequency modulation response from DC to 2 GHz
Author :
Goobar, E. ; Gillner, L. ; Schatz, R. ; Broberg, B. ; Tanbun-Ek, T. ; Nilsson, S.
Author_Institution :
Dept. of Microwave Eng. & Fibre Opt., R. Inst. of Technol., Stockholm, Sweden
fDate :
6/9/1988 12:00:00 AM
Abstract :
The frequency modulation characteristics of a VPE-transported 1.53 μm wavelength GaInAsP-InP DFB semiconductor diode laser was measured. Below approximately 0.7 mW optical output power per facet, it exhibited a smooth, blue-shifted, frequency modulation response from DC to 2 GHz. In the modulation frequency range of 10 MHz to 100 MHz it exhibited a |Δf/ΔI| of 0.5-1.8 GHz/mA, depending on the biasing level
Keywords :
III-V semiconductors; distributed feedback lasers; frequency modulation; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; semiconductor junction lasers; vapour phase epitaxial growth; 0 to 2 GHz; 0.7 mW; 1.53 micron; GaInAsP-InP; VPE-transported DFB laser; blue-shifted frequency modulation response; frequency modulation characteristics; modulation frequency range; optical output power; semiconductors;
Journal_Title :
Electronics Letters
